Düsseldorf, 02 April 2003 – The new InGaP HBT power amplifiers (Heterojunction Bipolar Transistor) from NEC Electronics (Europe) offer standby mode feature with a power-saving dark current of 0.1 µA. The devices ideally support 5GHz band WLAN applications and solutions for wireless communication, consumer electronics or can be used in PC network equipment and communication equipment.

Both power amplifiers, the low gain type µPG2305TQ (Gp = 22 dB) and the high gain type µPG2306TQ (Gp = 30 dB), feature a high linear output power of Pin(1 dB) of

+27 dBm, a high linearity of OIP3 (38 dBm) and a high efficiency of 40 % (PAE value). The 4.8 GHz to 6 GHz operation guarantees applicability for all 5 GHz band WLAN standards, like IEEE802.11a and HiperLAN2.

A high-density surface mounting in mass production is possible because of both devices are available in small 10-pin TSON packages (2.55 x 2.4 x 0.6 mm).

The high power gain, the high linear output power, the standby mode feature and especially the high efficiency make the µPG2305TQ and the µPG2306TQ ideal as antenna or frequency band amplifiers and for all kind of applications which use IEEE802.11a or HiperLAN2 standards, like PC cards and access points.

Samples are available.